parameter test conditions symbol min typ max units peak sensitivity wavelength d ps ? 880 ? nm wavelength sensitivity range d sr 400 ? 1000 nm reception angle 0 ? 120 ? deg. collector emitter dark current v ce = 25 v, e e = 0 i d ? ? 200 na collector emitter breakdown i c = 1 ma bv ceo 30 ? ? v emitter collector breakdown i e = 100 a bv eco 5?? v on-state collector current e e = 0.1 mw/cm 2 (4) , v ce = 5 v i c (on) 16 ? ? a saturation voltage e e = 0.5 mw/cm 2 (4) , i c = 0.05 ma v ce (sat) ? ? 0.3 v rise time v cc = 5 v, r l = 100 1 t r ?8?s fall time i c = 1 ma t f ?8?s electrical / optical characteristics (t a =25c) notes 1. derate power dissipation linearly 2.2 mw/c above 25c. 2. rma flux is recommended. 3. methanol or isopropyl alcohols are recommended as cleaning agents. 4. d = 940 nm. parameter symbol rating unit operating temperature t opr -55 to +100 c storage temperature t stg -55 to +100 c soldering temperature (flow) (2,3) t sol-f 260 for 10 sec c collector emitter voltage v ce 35 v emitter collector voltage v ec 5v collector current i c 15 ma power dissipation (1) p d 165 mw absolute maximum ratings (t a = 25c unless otherwise specified) package dimensions 0.118 (3.0) 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.035 (0.9) 0.028 (0.7) 0.083 (2.1) 0.067 (1.7) 0.134 (3.4) 0.118 (3.0) 0.024 (0.6) 0.016 (0.4) 0.007 (.18) 0.005 (.12) 0.043 (1.1) 0.020 (0.5) 0.041 (0.1) 0.094 (2.4) collector notes: 1. dimensions for all drawings are in inches (millimeters). 2. tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. features surface mount plcc-2 package wide reception angle, 120 high sensitivity phototransistor output matched emitter: qeb421 schematic emitter collector qsb320 surface mount silicon infrared phototransistor ? ? 2001 fairchild semiconductor corporation ds300386 2/26/01 1 of 3 www.fairchildsemi.com
qsb320 surface mount silicon infrared phototransistor fig.1 dark current vs. ambient temperature t a -ambient temperature ( o c ) 40 60 80 100 i d -nor maliz ed dar k current 10 -1 10 0 10 1 10 2 10 3 v ce =10v v ce =25v normalized to: v ce =25v t a =25 o c fig.2 dark current vs. collector emitter voltage v ce -collector emitter voltage (v) 0 102030405060 i d -dar k current (na) 0.1 1 10 fig4. light current vs. ambient temperature t a -ambient temperature ( o c) -40 -20 0 20 40 60 80 100 i l -nor maliz ed light current 0.1 1 10 v 2 t normalized to: ce =5v ee=0.5mw/cm a =25 o c fig.3 light current vs. collector to emitter voltage v ce -collector-emitter voltage (v) 0.1 1 10 i l -nor maliz ed light current 0.001 0.01 0.1 1 10 normalized to: v ce =5v ee=0.5mw/cm 2 t a =25 o c ee=1mw/cm 2 ee=0.5mw/cm 2 ee=0.2mw/cm 2 ee=0.1mw/cm 2 www.fairchildsemi.com 2 of 3 2/26/01 ds300386 v =5v t 2
qsb320 surface mount silicon infrared phototransistor disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild ? s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ds300386 2/26/01 3 of 3 www.fairchildsemi.com
|
